A 70 GHz Static Dual-Modulus Frequency Divider in SiGe BiCMOS Technology

被引：0
|
作者：
Ergintav, Arzu [1 ]
Borngraeber, Johannes [1 ]
Heinemann, Bernd [1 ]
Ruecker, Holger [1 ]
Herzel, Frank [1 ]
Kissinger, Dietmar [1 ,2 ]
机构：
[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
[2] Tech Univ Berlin, D-10587 Berlin, Germany
来源：
2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2015年
关键词：
frequency divider; SiGe BiCMOS; dual-modulus divider; ECL logic; phase-locked loop; millimeter-wave radar; DESIGN; CMOS;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A 2/3 divider in a 130 nm SiGe BiCMOS technology is presented. Inductive shunt peaking was used to optimize the divider for high input frequencies. Two test circuits with and without input balun were manufactured for characterization at high and low input frequencies, respectively. The divider is functional for input frequencies up to 70 GHz and draws 20 mA from a 3.3 V supply. The circuit will enable high-performance frequency synthesizers at 120 GHz and above.
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页码：65 / 68
页数：4
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