A 3.6kV High Performance Solid State Transformer Based on 13kV SiC MOSFET

被引:0
|
作者
Wang, Fei [1 ]
Wang, Gangyao [2 ]
Huang, Alex [1 ]
Yu, Wensong [1 ]
Ni, Xijun [1 ]
机构
[1] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA
[2] Cree inc, Durham, NC USA
基金
美国国家科学基金会;
关键词
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper presents the development of a distribution network solid state transformer (SST) based on high voltage (13kV) SiC MOSFET and JBS diode. This distribution SST is composed with a medium voltage ac/dc rectifier, medium voltage medium frequency dc/dc converter and a low voltage inverter. It's able to be interfaced to 3.6kV distribution grid and output both a 400V dc and 240/120V ac. This paper presents the characterization of the high voltage SiC MOSFET devices, and the design of rectifier and dc/dc converter. The test results of its grid-connected operation including pre-charge, start up, regeneration, etc. are included to show the functionalities of the designed SST prototype.
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack
    Dalal, Dipen Narendra
    Zhao, Hongbo
    Jorgensen, Jannick Kjaer
    Christensen, Nicklas
    Jorgensen, Asger Bjorn
    Beczkowski, Szymon
    Uhrenfeldt, Christian
    Munk-Nielsen, Stig
    2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020), 2020, : 2751 - 2757
  • [42] 7.2 kV Three-Port SiC Single-Stage Current-Source Solid-State Transformer With 90 kV Lightning Protection
    Zheng, Liran
    Han, Xiangyu
    Xu, Chunmeng
    Kandula, Rajendra Prasad
    Graber, Lukas
    Saeedifard, Maryam
    Divan, Deepak
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (10) : 12080 - 12094
  • [43] Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and Its Application as A Solid-State Circuit Breaker
    Rezaei, Mohammad Ali
    Wang, Gangyao
    Huang, Alex Q.
    Cheng, Lin
    Palmour, John W.
    Scozzie, Charles
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 1025 - +
  • [44] Comparative Performance Evaluation of Series Connected 15 kV SiC IGBT Devices and 15 kV SiC MOSFET Devices for MV Power Conversion Systems
    Vechalapu, Kasunaidu
    Negi, Abhay
    Bhattacharya, Subhashish
    2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
  • [45] Active Hybrid Solid State Transformer Based on Multi-Level Converter Using SiC MOSFET
    Yun, Chun-gi
    Cho, Younghoon
    ENERGIES, 2019, 12 (01):
  • [46] Enabling DC Microgrids with Direct MV DC Interfacing DAB Converter based on 15 kV SiC IGBT and 15 kV SiC MOSFET
    Tripathi, Awneesh
    Madhusoodhanan, Sachin
    Mainali, Krishna
    Vcchalapu, Kasunaidu
    Chattopadhyay, Ritwik
    Bhattacharya, Subhashish
    2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
  • [47] A 3.6 kV full SiC fuel cell boost converter for high power electric aircraft
    Kreutzer, Otto
    Gerner, Maximilian
    Billmann, Markus
    Maerz, Martin
    2018 IEEE TRANSPORTATION AND ELECTRIFICATION CONFERENCE AND EXPO (ITEC), 2018, : 220 - 225
  • [48] Electrical Characterization of 1.2kV SiC MOSFET at Extremely High Junction Temperature
    Sun, Jiahui
    Xu, Hongyi
    Yang, Shu
    Sheng, Kuang
    PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2018, : 387 - 390
  • [49] A Study of Dynamic High Voltage Output Charge Measurement for 15 kV SiC MOSFET
    Wang, Li
    Zhu, Qianlai
    Yu, Wensong
    Huang, Alex Q.
    2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
  • [50] SILVACO-BASED EVALUATION OF 10 kV 4H-SiC MOSFET AS A SOLID-STATE SWITCH IN NARROW-PULSE APPLICATION
    Pushpakaran, B.
    Bayne, S.
    Ogunniyi, A.
    2017 IEEE 21ST INTERNATIONAL CONFERENCE ON PULSED POWER (PPC), 2017,