Influence of sheet resistance on N2O-grown polyoxide

被引：0

作者：

Chang, KM ^{[1
]}

Lee, TC

Liu, SH

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4A期

关键词：

sheet resistance; polyoxide; phosphorus; polysilicon; charge-to-breakdown;

D O I：

10.1143/JJAP.39.1604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of sheet resistance on polyoxide was explored in this paper. Polyoxides were grown on polysilicon with different sheet resistances (30-150 Omega/cm(2)). It was found that as the sheet resistance increased from 30 Omega/cm(2) to 50 Omega/cm(2) the characteristics of polyoxide was improved with higher breakdown electric field and higher charge-to-breakdown. However, as the sheet resistance continued to increase (> 110 Omega/cm(2)), the characteristics of polyoxide became worse again. This phenomenon is explained by phosphorus concentration incorporated into polyoxide. Phosphorus concentration helps to form a smoother polyoxide/polysilicon interface. Thus, the characteristics of polyoxide with high sheet resistance (>110 Omega/cm(2)) was worse than that of polyoxide with low sheet resistance due to a rough polyoxide interface. However, too much. phosphorus incorporated into polyoxide degrades the quality of polyoxide. So the characteristics of polyoxide with low sheet resistance (<50 Omega/cm(2)) became worse again. Consequently, high quality of polyoxide should he grown on the polysilicon with middle sheet resistance (50-110 Omega/cm(2)).

引用

页码：1604 / 1607

页数：4

共 50 条

[21] DEPENDENCE OF HOT-CARRIER IMMUNITY ON CHANNEL LENGTH AND CHANNEL WIDTH IN MOSFETS WITH N2O-GROWN GATE OXIDES
LO, GQ
AHN, J
KWONG, DL
YOUNG, KK
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) : 651 - 653
[22] Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment
Liu, CH
Lin, HS
Lin, YY
Chen, MG
Pan, TM
Kao, CJ
Huang, KT
Lin, SH
Sheng, YC
Chang, WT
Lee, JH
Huang, M
Hsiung, CS
Huang-Lu, S
Hsu, CC
Liang, AY
Chen, JK
Hsieh, WY
Yen, PW
Chien, SC
Loh, YT
Chang, YJ
Liou, FT
40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, : 268 - 271
[23] Improvements of Performance and Reliability for Metal-Oxide-Nitride-Oxide-Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer
Chen, J. X.
Xu, J. P.
Liu, L.
Huang, X. D.
Lai, P. T.
Xu, H. X.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 14 (01) : 9 - 12
[24] Light Influence on the Sheet Resistance of AlGaN/GaN Heterostructures Grown by MOVPE Technique
Pokryszka, Piotr
Szymanski, Tomasz
Paszkiewicz, Bogdan
CRYSTAL RESEARCH AND TECHNOLOGY, 2018, 53 (11)
[25] Electrical characteristics of polyoxide prepared by N2 preannealing
Chang, KM
Lee, TC
Wang, JY
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2000, 3 (01) : 39 - 40
[26] INFLUENCE OF THICKNESS ON FRACTURE RESISTANCE FOR 2 TITANIUM SHEET ALLOYS
SULLIVAN, AM
FREED, CN
REPORT OF NRL PROGRESS, 1971, (NAUG): : 23 - &
[27] N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes
Noborio, Masato
Suda, Jun
Kimoto, Tsunenobu
APPLIED PHYSICS LETTERS, 2008, 93 (19)
[28] CHARACTERIZATIONS OF OXIDE GROWN BY N2O
CHAO, TS
CHEN, WH
SUN, SC
CHANG, HY
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (10) : 2905 - 2907
[29] RADIATION EFFECTS IN OXYNITRIDES GROWN IN N2O
SAKS, NS
SIMONS, M
FLEETWOOD, DM
YOUNT, JT
LENAHAN, PM
KLEIN, RB
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) : 1854 - 1863
[30] Mechanistic influence on uniformity of sheet resistance of AlGaN/GaN HEMT grown on Si substrate with the graded AlGaN buffer layers
Ma, Jinbang
Zhang, Yachao
Li, Yifan
Zhang, Tao
Yao, Yixin
Feng, Qian
Bi, Zhen
Zhang, Jincheng
Hao, Yue
VACUUM, 2022, 199

← 1 2 3 4 5 →