InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers

被引：70
|
作者：
Yao, Baoquan [1 ]
Tian, Yi [1 ]
Li, Gang [1 ]
Wang, Yuezhu [1 ]
机构：
[1] Harbin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150080, Peoples R China
来源：
OPTICS EXPRESS | 2010年 / 18卷 / 13期
关键词：
ND-YAG LASER; GAAS OUTPUT COUPLER; 2; MU-M;
D O I：
10.1364/OE.18.013574
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate the first use of InGaAs/GaAs as a saturable absorber in the Q-switching of a diode pumped Tm3+ doped laser operating at the wavelengths of 1940 nm and 1986 nm. The influence of the semiconductor saturable absorber's (SESA) position and thermal lens effect on the Q-switch characteristics was investigated. With a pump power of 35 W, the maximum pulse energy of 28.1 mu J with a pulse width of 447 ns at the pulse repetition frequency (PRF) of 43.7 kHz was obtained by selecting the appropriate position of the SESA. (C) 2010 Optical Society of America
引用
收藏
页码：13574 / 13579
页数：6
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