Force Fields for Molecular Dynamics Simulation of the Deposition of a Silicon Dioxide Film

In this work we compare two force fields that are intended for the molecular dynamics simulation of the process of the deposition of silicon dioxide thin films. Analysis of the structural characteristics (the density and radial distribution function) of a glassy silicon dioxide cluster that was used as a substrate and a deposited film is carried out. It is shown that the DESIL force field in which the Van der Waals interaction is described by the Lennard-Jones potential turns out to be more suitable for modeling the process of deposition.