Electron tunneling cross-talk: Selective transmission in semiconductor nanowires

被引：2
|
作者：
Dobrzynski, L [1 ]
机构：
[1] Univ Sci & Tech Lille Flandres Artois, Ctr Natl Rech Sci, UMR 8024, F-59655 Villeneuve Dascq, France
来源：
PHYSICAL REVIEW B | 2004年 / 70卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.70.193307
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The system presented here avoids, thanks to the quantum tunneling effect, collision between two incoming electrons in a "crossing" made out of monomode wires of one semiconductor. The structure has two input gates, through which two electrons of the same energy and opposite spins can enter the system. These two electrons are resonantly cross-transferred between the two input and the two output gates.
引用
收藏
页码：1 / 3
页数：3
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