Origin of domain wall induced magnetoelectricity in rare-earth iron garnet single crystals and films

被引:4
|
作者
Popov, A. I. [1 ,2 ]
Gareeva, Z. V. [3 ,4 ]
Zvezdin, A. K. [2 ,5 ,6 ]
Gareev, T. T. [7 ]
Sergeev, A. S. [7 ]
Pyatakov, A. P. [7 ]
机构
[1] State Univ, Moscow Inst Phys & Technol, Dolgoprudnyi, Russia
[2] Natl Res Univ Elect Technol Zelenograd, Moscow, Russia
[3] Inst Mol & Crystal Phys, Ufa, Russia
[4] Bashkir State Univ, Ufa, Russia
[5] AM Prokhorov Gen Phys Inst, Moscow, Russia
[6] Russian Acad Sci, PN Lebedev Phys Inst, Moscow, Russia
[7] Moscow MV Lomonosov State Univ, Moscow, Russia
基金
俄罗斯基础研究基金会;
关键词
Magnetoelectric effect; domain walls; multiferroics; MULTIFERROICS; TRANSITION; YIG;
D O I
10.1080/00150193.2017.1292111
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this article, we discuss the mechanism of magnetoelectric effect in rare-earth iron garnets related to the low symmetry environment of rare-earth ions and magnetic inhomogeneity created by iron subsystem. Low symmetry environment of rare-earth ions leads to antiferroelectric arrangement of their electric dipole moments and favors releasing of iron garnets ferroelectricity. Magnetic domain walls act as the sources of non-uniform effective magnetic field breaking antiferroelectric ordering. We calculate electric polarization in a vicinity of Bloch domain walls in rare-earth iron garnet crystals and films, pick out their distinguished features, and touch upon experimental evidences of domain wall induced magnetoelectricity.
引用
收藏
页码:32 / 39
页数:8
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