Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure

被引：6

作者：

Studenikin, S. A. ^{[1
]}

Gaudreau, L. ^{[1
]}

Kataoka, K. ^{[1
,2
]}

Austing, D. G. ^{[1
]}

Sachrajda, A. S. ^{[1
]}

机构：

[1] Natl Res Council Canada, Emerging Technol Div, Ottawa, ON K1A 0R6, Canada

[2] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 23期

关键词：

ELECTRON-TRANSPORT; SPIN QUBIT; SILICON; OSCILLATIONS;

D O I：

10.1063/1.5023596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [Lu et al., Appl. Phys. Lett. 109, 093102 (2016)]. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two inplane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of similar to 2% in the sensor current.

引用

页数：5