Electron correlations in GaAs and AlGaAs superlattices

被引:4
|
作者
Abu Kassim, Hasan
Jalil, Ithnin Abdul
Yusof, Norhasliza
Devi, V. R.
Shrivastava, Keshav N. [1 ]
机构
[1] Univ Malaya, Dept Phys, Kuala Lumpur 50603, Malaysia
[2] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
关键词
D O I
10.1002/pssc.200673329
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have calculated the electronic correlation energy and the exchange energy of a system of GaAs lattice using the density functional theory. In 15 different calculations, we are able to find the energy values for different number of Al and Ga atoms. We have performed the calculation of the energy of the Schroedinger equation in three different approximations, namely, the local density approximation (LDA), the generalized gradient approximation with exchange (GGA-X) and the generalized gradient approximation with exchange and correlations (GGA-XQ. The correlation energy has a peak for the cell which has 9 Ga and 5 Al atoms. In this way, we find that the material for which the composition is in the ratio of GaAl = 9:5, has the strongest electron correlations. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:570 / 573
页数:4
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