An Enhanced Physical and Scalable Lumped Model of RF CMOS Spiral Inductors

被引：3
|
作者：
Salimy, S. [1 ]
Toutain, S. [1 ]
Rhallabi, A. [2 ]
Goullet, A. [2 ]
Saubat, J. C. [3 ]
Challali, F. [3 ]
机构：
[1] Inst Rech Elect & Electrotech Nantes Atlantique, Nantes, France
[2] CNRS, Inst Mat Jean Rouxel, UMR6502, Nantes, France
[3] MHS Elect, Nantes, France
来源：
2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年
关键词：
CMOS; Inductor Model; Physical Model; Spiral Inductor; CIRCUIT;
D O I：
10.1109/MWSYM.2009.5165872
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An enhanced scalable compact model for on-chip RF spiral inductors is presented in this paper. By considering the layout and technology parameters under quasi-static approximation, the model elements are all expressed analytically and based on physics assumption. The proposed approach improves the accuracy of the previous physical based scalable model, and considers the frequency dependant behavior of spiral inductors such as the substrate coupling, the skin and proximity effect.
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页码：1017 / +
页数：2
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