Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN

被引：27

作者：

Cho, Chu-Young ^{[1
]}

Kang, Se-Eun ^{[1
]}

Kim, Ki Seok ^{[1
]}

Lee, Sang-Jun ^{[1
]}

Choi, Yong-Seok ^{[1
]}

Han, Sang-Heon ^{[1
,3
]}

Jung, Gun-Young ^{[1
]}

Park, Seong-Ju ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[3] Samsung LED Co Ltd, Suwon 443743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 18期

关键词：

epitaxial growth; gallium compounds; III-V semiconductors; light emitting diodes; MOCVD coatings; photonic crystals; silicon compounds; wide band gap semiconductors; SPONTANEOUS EMISSION; PLASMA DAMAGE; OUTPUT POWER; PERFORMANCE; EFFICIENCY; SURFACE;

D O I：

10.1063/1.3427352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the properties of green light-emitting diodes (LEDs) with a photonic crystal (PC) structure on p-GaN. A PC structure was fabricated by the selective area epitaxy of p-GaN using SiO(2) nanopillars. The electrical characteristics of LEDs with PC were not degraded and the optical output power of green LEDs with PC was increased by 70% at 20 mA of injection current compared with that of conventional LEDs without PC. This enhancement of optical output power was attributed to the improvement in light extraction efficiency by the SiO(2)/p-GaN PC layer on p-GaN. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427352]

引用

页数：3

共 50 条

[41] Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure
付丙磊
刘乃鑫
刘喆
李晋闽
王军喜
Journal of Semiconductors, 2014, 35 (11) : 74 - 77
[42] Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure
Fu Binglei
Liu Naixin
Liu Zhe
Li Jinmin
Wang Junxi
JOURNAL OF SEMICONDUCTORS, 2014, 35 (11)
[43] Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
McGroddy, K.
David, A.
Matioli, E.
Iza, M.
Nakamura, S.
DenBaars, S.
Speck, J. S.
Weisbuch, C.
Hu, E. L.
APPLIED PHYSICS LETTERS, 2008, 93 (10)
[44] Random rubbed structure for enhanced light extraction in organic light-emitting diodes
Shin, Cheol
Lee, Seungwon
Choi, Kwang Wook
Hwang, Young Hyun
Park, Young Wook
Ju, Byeong-Kwon
Journal of Luminescence, 2022, 243
[45] Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN
Cho, Chu-Young
Kwon, Min-Ki
Lee, Sang-Jun
Han, Sang-Heon
Kang, Jang-Won
Kang, Se-Eun
Lee, Dong-Yul
Park, Seong-Ju
NANOTECHNOLOGY, 2010, 21 (20)
[46] Random rubbed structure for enhanced light extraction in organic light-emitting diodes
Shin, Cheol
Lee, Seungwon
Choi, Kwang Wook
Hwang, Young Hyun
Park, Young Wook
Ju, Byeong-Kwon
JOURNAL OF LUMINESCENCE, 2022, 243
[47] Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes
Matioli, Elison
Fleury, Blaise
Rangel, Elizabeth
Hu, Evelyn
Speck, James
Weisbuch, Claude
JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)
[48] Photonic crystal laser lift-off GaN light-emitting diodes
David, A
Fujii, T
Moran, B
Nakamura, S
DenBaars, SP
Weisbuch, C
Benisty, H
APPLIED PHYSICS LETTERS, 2006, 88 (13)
[49] Enhanced light-extraction from hierarchical surfaces consisting of p-GaN microdomes and SiO2 nanorods for GaN-based light-emitting diodes
Ho, Cheng-Han
Hsiao, Yu-Hsuan
Lien, Der-Hsien
Tsai, M. S.
Chang, Don
Lai, Kun-Yu
Sun, Ching-Cherng
He, Jr-Hau
APPLIED PHYSICS LETTERS, 2013, 103 (16)
[50] Enhanced performance characteristics of n-ZnO/p-GaN heterojunction light-emitting diodes by forming excellent Ohmic contact to p-GaN
Jeong, Seonghoon
Kim, Hyunsoo
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 39 : 771 - 774

← 1 2 3 4 5 →