Electrical characterisation of β-Ga2O3 Schottky diode for deep UV sensor applications

被引：0
|
作者：
Vieira, Douglas H.
Badiei, Nafiseh
Evans, Jonathan E.
Alves, Neri
Kettle, Jeff [1 ]
Li, Lijie
机构：
[1] Bangor Univ, Sch Elect Engn, Bangor, Gwynedd, Wales
来源：
2020 IEEE SENSORS | 2020年
基金：
巴西圣保罗研究基金会;
关键词：
Schottky diode; beta-Ga2O3; deep UV; planar diode;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
beta-Ga2O3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a beta-Ga2O3 Schottky diode, in which the same electrode material is used for both contacts. The device is tested it for its applicability in deep UV sensing. Devices were manufactured directly onto beta-Ga2O3 (010) wafer material. From the perspective of diode performance, a high rectification ratio of 1.5x10(7) and high forward current of 17.58 mA/cm(2) at -5 V bias was obtained. A responsivity of 12.5 mA/W was recorded when irradiated with light possessing a wavelength of 254 nm. Importantly, detailed analysis is conducted in order to evaluate the performance of the Schottky diode using Cheung's and Norde's methods allowing for accurate calculation of the Schottky barrier height in this device.
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页数：4
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