Solution synthesis of epitaxial films of bismuth containing ferroelectric materials

被引:3
|
作者
Beach, DB [1 ]
Morrell, JS
Xue, ZLB
Specht, ED
机构
[1] Oak Ridge Natl Lab, Div Chem & Analyt Sci, Oak Ridge, TN 37831 USA
[2] Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA
[3] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
关键词
epitaxy; solution synthesis; bismuth layered compounds;
D O I
10.1080/10584580008222218
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Methoxyethoxide complexes in 2-methoxyethanol were used to produce epitaxial thin films of SrBi2Nb2O9, SrBi2Ta2O9, BaBi2Nb2O9, and BaBi2Ta2O9 on [100] oriented single-crystals of SrTiO3 and LaAlO3. Films were prepared by spin coating substrates with alkoxide solutions and firing in air at 850 degrees C for 20 minutes, With the exception of BaBi2Ta2O9 on LaAlO3, all of the films were the desired c-axis oriented Aurivillius phase. Out-of-plane orientation was confirmed by theta;20 scans which showed only [002l] reflections, and in-plane orientation was determined by phi-scans about the [105] plane, Lattice constants and full-width at half-maximum (fwhm) values for both in-plane and out-of-plane reflections are reported.
引用
收藏
页码:29 / 36
页数:8
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