Study of the Transformation of Gallium Arsenide Surface Layers under the Action of Light by Means of Surface Acoustic Waves

被引:1
|
作者
Bryantseva, T. A. [1 ]
Markov, I. A. [1 ]
Ten, Yu A. [1 ]
机构
[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Fryazino Branch, Fryazino 141120, Moscow Oblast, Russia
关键词
GAAS SURFACE; CBE;
D O I
10.1134/S1064226921050028
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Changes in the state of the surface layer of semi-insulating (111) GaAs in air under the action of white light are studied using surface acoustic waves (SAWs). It is shown that, depending on the light intensity and the SAW power, the reactions of interaction with molecules, atoms, and charged particles of the air are enhanced or weakened. The role of standing acoustic waves arising in the surface layers of gallium arsenide, namely, the concentration of interaction effects in places of maximum illumination as a result of diffraction of light by standing acoustic waves, is considered. The formation of nuclei (Ga + As) in the diffraction spots, covered with layers of compounds with oxygen and carbon, either growing or spreading, is found, and the fact that the formation of an oxide layer leads to a reorientation of the GaAs surface is established.
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页码:613 / 621
页数:9
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