Impurities identification in a synthetic diamond by transmission electron microscopy

被引:18
|
作者
Yin, LW [1 ]
Zou, ZD
Li, MS
Sun, DS
Liu, YX
Hao, ZY
机构
[1] Shandong Univ Technol, Coll Mat Sci & Engn, Jinan 250061, Peoples R China
[2] Jilin Univ, Natl Key Lab Superhard Mat, Changchun 130012, Peoples R China
基金
中国国家自然科学基金;
关键词
synthetic diamond; high temperature-high pressure; impurities; transmission electron microscopy;
D O I
10.1016/S0925-9635(00)00355-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Three types of impurities, which were trapped in diamond single crystal during process of the diamond crystal growth under high temperature and high pressure in the presence of iron-nickel solvent catalyst, have been successfully and directly investigated by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Both the chemical composition and the crystal structure of the impurities were identified and determined. The impurities may be derived from the starting materials and the medium (pyrophillite) for transmitting the pressure, they consisted of amorphous graphite, f.c.c. (FeNi)(23)C-6 and orthorhombic FeSi2. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:2006 / 2009
页数:4
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