Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys

被引：179

作者：

Lindsay, A ^{[1
]}

O'Reilly, EP ^{[1
]}

机构：

[1] Univ Coll, NMRC, Cork, Ireland

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 19期

基金：

爱尔兰科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.93.196402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that a quantitative description of the conduction band in Ga(In)NAs is obtained by combining the experimentally motivated band anticrossing model with detailed calculations of nitrogen cluster states. The unexpectedly large electron effective mass values observed in many GaNAs samples are due to hybridization between the conduction band edge E- nitrogen cluster states close to the band edge. Similar effects explain the difficulty in observing the higher-lying E+ level at low N composition. We predict a decrease of effective mass with hydrostatic pressure in many GaNAs samples.

引用

页码：196402 / 1

页数：4

共 28 条

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[25] EXPERIMENTAL TEST OF RIGID BAND MODELS FOR CR BY MEANS OF CR-V-MN TERNARY DILUTE ALLOYS
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[27] Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models
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[28] Pressure studies of conduction-band N-pair-state mixing in dilute GaAs1-xNx alloys
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PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4): : 317 - 320

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