Preparation of high purity silver thin films by laser MOCVD using liquid source delivery system

被引：0
|
作者：
Uchida, H [1 ]
Itsuki, A [1 ]
Sato, M [1 ]
Ogi, K [1 ]
机构：
[1] Mitsubishi Mat Corp, Cent Res Inst, Omiya, Saitama 330, Japan
来源：
VALUE-ADDITION METALLURGY | 1998年
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
(BTMSE)Ag(hfac) (BTMSE = trans-bis(trimethylsilyl)ethene) was chosen as a suitable precursor for the XeCl laser (308nm) MOCVD of Ag. Iso-propanol solution of (BTMSE)Ag(hfac) was used as a liquid source for the liquid delivery method, high deposition rate 9nm/min at substrate temperatures of 100 degrees C and 120 degrees C were obtained at the vaporizer temperature of 90 degrees C. This deposition rate is three times faster than by conventional bubbling method and life of the source and reproducibility of the deposition were also improved. Electric resistivities of the laser deposited film shows significantly low resistivity of 10(-6)Omega-cm compared to 10(-3)Omega-cm of thermal MOCVD film These results indicates that the laser MOCVD is one of the effective method for the preparation of the high quality silver film.
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页码：187 / 196
页数：10
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