Hall and magnetoresistance effects obtained from simultaneous measurements of liquid metals and semiconductors

被引:0
|
作者
Ogita, M [1 ]
Ito, T
Isai, A
Mogi, I
Awaji, S
Yokoo, K
机构
[1] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan
[2] Tohoku Univ, IMR, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, RIEC, Sendai, Miyagi 9808577, Japan
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2004年 / 18卷 / 27-29期
关键词
Hall effect; magnetoresistance; two-frequency ac method; ac-dc method;
D O I
10.1142/S0217979204027153
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hall measurements of liquid metals, using two-frequency, ac-dc and simultaneous methods axe described. The Hall effect has been measured in Hg and Ga metals, in both solid and liquid states. The magnetoresistance and Hall effects have also been measured in an InSb single crystal, which exhibited magnetoresistance even in low magnetic field, and in Si, which did not exhibit magnetoresistance in low magnetic field. In order to investigate the magnetic field dependence of the observed galvanomagnetic effects for solid and liquid state metals, and for semiconductors, Hall measurements in high magnetic field, up to +/- 9 T, were also performed.
引用
收藏
页码:3625 / 3628
页数:4
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