Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

被引：2

作者：

Dalla Betta, G. -F. ^{[1
,2
]}

Batignani, G. ^{[3
,4
]}

Benkechkache, M. A. ^{[2
,5
]}

Bettarini, S. ^{[3
,4
]}

Casarosa, G. ^{[3
,4
]}

Comotti, D. ^{[6
,7
]}

Fabris, L. ^{[7
,8
]}

Forti, F. ^{[3
,4
]}

Grassi, M. ^{[6
,7
]}

Latreche, S. ^{[5
]}

Lodola, L. ^{[6
,7
]}

Malcovati, P. ^{[6
,7
]}

Manghisoni, M. ^{[7
,8
]}

Mendicino, R. ^{[1
,2
]}

Morsani, F. ^{[4
]}

Paladino, A. ^{[3
,4
]}

Pancheri, L. ^{[1
,2
]}

Paoloni, E. ^{[3
,4
]}

Ratti, L. ^{[6
,7
]}

Re, V. ^{[7
,8
]}

Rizzo, G. ^{[3
,4
]}

Traversi, G. ^{[7
,8
]}

Vacchi, C. ^{[6
,7
]}

Verzellesi, G. ^{[2
,9
]}

Xu, H. ^{[1
,2
]}

机构：

[1] Univ Trento, Dipartimento Ingn Ind, I-38123 Trento, Italy

[2] TIFPA INFN, I-38123 Trento, Italy

[3] Univ Pisa, Dipartimento Fis, I-56127 Pisa, Italy

[4] Ist Nazl Fis Nucl, Sez Pisa, I-56127 Pisa, Italy

[5] Univ Constantine 1, Dept Elect Sci & Technol, I-25017, Constantine, Algeria

[6] Univ Pavia, Dipartimento Ingn Ind & Informaz, I-27100 Pavia, Italy

[7] Ist Nazl Fis Nucl, Sez Pavia, I-27100 Pavia, Italy

[8] Univ Bergamo, Dipartimento Ingn & Sci Applicate, I-24044 Dalmine, BG, Italy

[9] Univ Modena & Reggio Emilia, Dipartimento Sci & Metodi Ingn, I-42122 Reggio Emilia, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2016年 / 824卷

关键词：

Silicon detectors; Active edges; Breakdown voltage; TCAD simulations;

D O I：

10.1016/j.nima.2015.08.027

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report on the design and TCAD simulations of planar p-on-n sensors with active edge aimed at a four-side buttable X-ray detector module for future FEL applications. Edge terminations with different number of guard rings were designed to find the best trade-off between breakdown voltage and border gap size. The methodology of the sensor design, the optimization of the most relevant parameters to maximize the breakdown voltage and the final layout are described. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：384 / 385

页数：2

共 11 条

[1] Design and TCAD Simulations of Planar Active-Edge Pixel Sensors for Future XFEL Applications
Dalla Betta, Gian-Franco
Batignani, Giovanni
Benkechkache, Mohamed El Amine
Bettarini, Stefano
Casarosa, Giulia
Comotti, Daniele
Fabris, Lorenzo
Forti, Francesco
Grassi, Marco
Latreche-Lassoued, Saida
Lodola, Luca
Malcovati, Piero
Manghisoni, Massimo
Mendicino, Roberto
Morsani, Fabio
Paladino, Antonio
Pancheri, Lucio
Paoloni, Eugenio
Ratti, Lodovico
Re, Valerio
Rizzo, Giuliana
Traversi, Gianluca
Vacchi, Carla
Verzellesi, Giovanni
Xu, Hesong
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[5] Simulation and test results of a slim edge planar p-on-n sensor for FEL applications
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[J]. 2021 7TH INTERNATIONAL CONFERENCE ON ENGINEERING AND EMERGING TECHNOLOGIES (ICEET 2021), 2021, : 632 - 635
[6] Characterization and simulation of radiation effects on active edges n-on-p technology planar pixel sensors
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[7] Heavily irradiated N-in-p thin planar pixel sensors with and without active edges
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[J]. JOURNAL OF INSTRUMENTATION, 2014, 9
[8] Performance of n-on-p planar pixel sensors with active edges at high-luminosity environment
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[J]. EUROPEAN PHYSICAL JOURNAL PLUS, 2020, 135 (01):
[9] Performance of n-on-p planar pixel sensors with active edges at high-luminosity environment
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[J]. The European Physical Journal Plus, 135
[10] Analysis and optimal design of surface radiation hard p+n Si pixel detector: impact on signal collection using TCAD simulation
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Kaur, Balwinder
Srivastava, Ajay Kumar
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 177 (9-10): : 957 - 971

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