Design and TCAD Simulations of Planar Active-Edge Pixel Sensors for Future XFEL Applications

被引：0

作者：

Dalla Betta, Gian-Franco ^{[1
,2
]}

Batignani, Giovanni ^{[6
,7
]}

Benkechkache, Mohamed El Amine ^{[2
,3
]}

Bettarini, Stefano ^{[6
,7
]}

Casarosa, Giulia ^{[6
,7
]}

Comotti, Daniele ^{[9
,10
]}

Fabris, Lorenzo ^{[9
]}

Forti, Francesco ^{[6
,7
]}

Grassi, Marco ^{[9
,10
]}

Latreche-Lassoued, Saida ^{[3
]}

Lodola, Luca ^{[9
,10
]}

Malcovati, Piero ^{[9
,10
]}

Manghisoni, Massimo ^{[9
]}

Mendicino, Roberto ^{[1
,2
]}

Morsani, Fabio ^{[8
]}

Paladino, Antonio ^{[6
,7
]}

Pancheri, Lucio ^{[1
,2
]}

Paoloni, Eugenio ^{[6
,7
]}

Ratti, Lodovico ^{[9
,10
]}

Re, Valerio ^{[9
]}

Rizzo, Giuliana ^{[6
,7
]}

Traversi, Gianluca ^{[9
]}

Vacchi, Carla ^{[9
,10
]}

Verzellesi, Giovanni ^{[4
,5
]}

Xu, Hesong ^{[1
,2
]}

机构：

[1] Univ Trento, Ist Nazl Fis Nucl, Via Sommarive 9, I-38123 Trento, Italy

[2] Univ Trento, Dipartimento Ingn Ind, I-38123 Trento, Italy

[3] Univ Constantine 1, Dept Elect Sci & Technol Fac, Hyperfrequencies & Semicond Lab LHS, Constantine, Algeria

[4] Univ Modena & Reggio Emilia, TIFPA INFN, I-42122 Reggio Emilia, Italy

[5] Univ Modena & Reggio Emilia, Dipartimento Sci & Metodi Ingn, I-42122 Reggio Emilia, Italy

[6] Univ Pisa, Ist Nazl Fis Nucl, Sez Pisa, I-56127 Pisa, Italy

[7] Univ Pisa, Dipartimento Fis, I-56127 Pisa, Italy

[8] Ist Nazl Fis Nucl, Sez Pisa, I-56127 Pisa, Italy

[9] Ist Nazl Fis Nucl, Sez Pavia, Pavia, Italy

[10] Univ Pavia, Dipartimento Ingn Ind & Informaz, I-27100 Pavia, Italy

来源：

2014 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC) | 2014年

关键词：

DETECTORS;

D O I：

暂无

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

We report on the design and TCAD simulations of planar active-edge pixel sensors within the INFN PixFEL project. These devices are intended as one of the building blocks for the assembly of a multilayer, four-side buttable tile for X-ray imaging applications in future Free Electron Laser facilities. The requirements in terms of very wide dynamic range and tolerance to extremely high ionizing radiation doses call for high operation voltages. A comprehensive TCAD simulation study is presented, aimed at the best trade-offs between the minimization of the edge region size and the sensor breakdown voltage.

引用

页数：3

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