Simulation and measurement of multiplication in thin-film electroluminescent devices with doped probe layers

被引:3
|
作者
Neyts, K [1 ]
Corlatan, D [1 ]
机构
[1] Univ Calif Berkeley, Dept Mat Sci, Berkeley, CA 94720 USA
关键词
displays; electroluminescence; multiplication; optical films; space charge; thin-film devices;
D O I
10.1109/16.662774
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
When a single voltage pulse is applied to an electroluminescent (EL) device after previous illumination, the current through the phosphor laver will normally not be homogeneous, hut increase from the cathodic side-where the electrons tunnel from-to the anodic side, due to multiplication. The positive charges that remain after the multiplication process cause a positive space charge that has been observed in various experiments and in influences the efficiency. In this paper a simple numerical model is proposed for the calculation of charge transfer and light emission, in the cast? that multiplication takes place during a voltage pulse after previous illumination.
引用
收藏
页码:768 / 777
页数:10
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