Raman and IR spectroscopic characterization of molybdenum disulfide under under quasi-hydrostatic and non-hydrostatic conditions

被引：9

作者：

Shen, Pengfei ^{[1
]}

Li, Quanjun ^{[1
]}

Zhang, Huafang ^{[1
]}

Liu, Ran ^{[1
]}

Liu, Bo ^{[1
]}

Yang, Xigui ^{[1
]}

Dong, Qing ^{[1
]}

Cui, Tian ^{[1
]}

Liu, Bingbing ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2017年 / 254卷 / 06期

关键词：

high pressure; infrared spectroscopy; molybdenum disulfide; phase transition; Raman spectroscopy; HIGH-PRESSURE RAMAN; ELECTRONIC-PROPERTIES; MOS2; TRANSITION; METALLIZATION; MONOLAYER;

D O I：

10.1002/pssb.201600798

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Layered transition-metal dichalcogenides (TMDs) have recently attracted intense scientific and engineering interest because of their unique semiconducting and opto-electronic properties. We investigated the pressure-induced structural phase transition of layered semiconductor molybdenum disulfide (MoS2) using Raman spectroscopy and studied its metallization using infrared (IR) spectroscopy under both non-hydrostatic and quasi-hydrostatic conditions. Under quasi-hydrostatic and non-hydrostatic conditions, we found that the structural phase transition from 2H(c) stacking to 2H(a) stacking starts at approximately 16 and 21 GPa, respectively, and finishes at similar to 35 and similar to 41 GPa, respectively. Furthermore, the structural phase transition was followed by a semiconductor-to-metal (S-M) electronic transition. The pressure point of metallization under quasi-hydrostatic conditions is similar to 5 GPa lower than that under non-hydrostatic conditions. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：6

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