Formation of Si/SiOx interface and its influence on photoluminescence of Si nano-crystallites

被引：2
|
作者：
Becerril-Espinoza, FG
Torchynska, TV
Rodríguez, MM
Khomenkova, L
Scherbina, LV
机构：
[1] Inst Politecn Nacl, ESFM, Mexico City 07738, DF, Mexico
[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
photoluminescence; nano-structures; porous silicon;
D O I：
10.1016/S0026-2692(03)00120-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence (PL), PL excitation and atomic force microscopy investigations of porous silicon (PSi) have been done in as-prepared state and after 1.0 year storage in ambient air. In as-prepared state, Psi layers are characterised by two PL bands peaked at 1.70 and 2.00 eV. The complex analysing of the changes of PL parameters during the formation of the Si/SiOx interface give possibility to make conclusion concerning the PL and PL excitation mechanisms for both PL bands in Si-nano-crystallites. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：759 / 761
页数：3
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