Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low-k films modified in He/H2 downstream plasma

被引：23
|
作者：
Vanstreels, Kris [1 ]
Urbanowicz, Adam M. [1 ,2 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 01期
关键词：
curing; low-k dielectric thin films; mechanical properties; nanoindentation; plasma CVD; silicon compounds; MECHANICAL-PROPERTIES; ELASTIC-MODULUS; INDENTATION; HARDNESS; GLASSES; DAMAGE; LOAD;
D O I：
10.1116/1.3293200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of He/H-2 downstream plasma (DSP) on the mechanical properties of plasma enhanced chemical vapor deposition SiCOH low-k films was studied using nanoindentation (NI) with the continuous-stiffness measurement technique. Furthermore, the main requirements for reliable NI measurements on plasma-modified low-k films are discussed. The results show that the mechanical properties of these films are intimately linked with their porosity and that exposure to He/H-2 DSP causes a change in both the porosity and the mechanical properties of the films. This change is related to the removal of porogen residue formed during the ultraviolet curing of the low-k film.
引用
收藏
页码：173 / 179
页数：7
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