Negative magnetoresistance in transverse and longitudinal magnetic fields in Bi nanowires

被引:4
|
作者
Nikolaeva, A. A. [1 ,2 ]
Konopko, L. A. [1 ,2 ]
Huber, T. E. [3 ]
Sineavsky, E. P. [4 ]
Khamidullin, R. A. [4 ]
Tsurkan, A. C. [1 ]
机构
[1] ASM, Inst Elect Engn & Ind Technol, MD-2028 Chishinau, MD, Moldova
[2] Int Lab High Magnet Fields & Low Temp, Wroclaw, Poland
[3] Howard Univ, Dept Chem, Washington, DC 20059 USA
[4] ASM, Inst Appl Phys, MD-2028 Chishinau, MD, Moldova
关键词
TRANSPORT-PROPERTIES; BISMUTH;
D O I
10.1088/1742-6596/150/2/022065
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work the measurements of longitudinal (LMR) and transverse magnetoresistance (TMR) in Bi wires with 50<d<500 nm in the interval 4.2 - 300 K and magnetic field up to 14 T were carried out. Was shown that, the maximum on LMR at H parallel to I is suppressed due to quantum size effect. For the first time it was found that the field dependence of TMR R(H) at I perpendicular to H) in Bi wires with d<80 nm contains the negative region R(H) < R-0 at T<5 K. This result was unexpected, because it is known that in bulk Bi samples the "giant" increase of magnetoresistance in the case H I is observed. We calculate the conductivity of nanowires in longitudinal and transverse magnetic fields on the basis of the Cubo formula for the conductivity. We use the model of quantum wires with a parabolic potential in the plane orthogonal to the axis of the size-quantized system. According to the model of such TMR and LMR were experimentally observed in the Bi quantum wires (QW) with d<80nm.
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页数:4
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