Energy-filtered cold electron transport at room temperature

被引:18
|
作者
Bhadrachalam, Pradeep [1 ,2 ]
Subramanian, Ramkumar [1 ,2 ]
Ray, Vishva [1 ,2 ]
Ma, Liang-Chieh [1 ,2 ]
Wang, Weichao [3 ]
Kim, Jiyoung [3 ]
Cho, Kyeongjae [3 ]
Koh, Seong Jin [1 ,2 ]
机构
[1] Univ Texas Arlington, Dept Mat Sci & Engn, Arlington, TX 76019 USA
[2] Univ Texas Arlington, Nanotechnol Res Ctr, Arlington, TX 76019 USA
[3] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
来源
NATURE COMMUNICATIONS | 2014年 / 5卷
基金
美国国家科学基金会;
关键词
NANOCRYSTAL QUANTUM DOTS; TUNNELING SPECTROSCOPY; SEMICONDUCTOR NANOCRYSTALS; SPONTANEOUS EMISSION; TRANSISTORS; RELAXATION; DEVICES; DEPENDENCE; MOLECULES; DIODES;
D O I
10.1038/ncomms5745
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Fermi-Dirac electron thermal excitation is an intrinsic phenomenon that limits functionality of various electron systems. Efforts to manipulate electron thermal excitation have been successful when the entire system is cooled to cryogenic temperatures, typically <1K. Here we show that electron thermal excitation can be effectively suppressed at room temperature, and energy-suppressed electrons, whose energy distribution corresponds to an effective electron temperature of similar to 45 K, can be transported throughout device components without external cooling. This is accomplished using a discrete level of a quantum well, which filters out thermally excited electrons and permits only energy-suppressed electrons to participate in electron transport. The quantum well (similar to 2nm of Cr2O3) is formed between source (Cr) and tunnelling barrier (SiO2) in a double-barrier-tunnelling-junction structure having a quantum dot as the central island. Cold electron transport is detected from extremely narrow differential conductance peaks in electron tunnelling through CdSe quantum dots, with full widths at half maximum of only similar to 15mV at room temperature.
引用
收藏
页数:8
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