Distribution of 28Si, 29Si, and 30Si Isotopes under Plastic Deformation in Subsurface Layers of Si : B Crystals

被引：1
|
作者：
Koplak, O. V. [1 ,2 ]
Vasil'ev, M. A. [3 ]
Morgunov, R. B. [1 ]
机构：
[1] Russian Acad Sci, Inst Problems Chem Phys, Ul Akad Semenova 1, Chernogolovka 142432, Moscow Oblast, Russia
[2] Taras Shevchenko Natl Univ Kyiv, Ul Volodymyrska 64-13, UA-01601 Kiev, Ukraine
[3] Natl Acad Sci, Kurdyumov Inst Met Phys, Vernadsky Blvd 36, UA-03680 Kiev, Ukraine
来源：
PHYSICS OF THE SOLID STATE | 2016年 / 58卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
SILICON SELF-DIFFUSION;
D O I：
10.1134/S1063783416020165
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The redistribution of Si-28, Si-29, and Si-30 isotopes in subsurface layers of Si : B single crystals after their plastic deformation has been revealed. It has been found that the distribution profile of Si-28 and Si-29 isotopes becomes smoother after deformation, whereas the Si-30 isotope distribution remains unchanged. A change in the subsurface profile of the (SiO)-Si-29 oxide is observed, which indicates the migration of the Si-29 isotope in the composition of oxygen complexes during plastic deformation.
引用
收藏
页码：247 / 250
页数：4
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