Growth of High-Quality AlN on Sapphire and Development of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

被引：10
|
作者：
Hirayama, H. [1 ]
机构：
[1] RIKEN, Quantum Optodevice Lab, Wako, Saitama, Japan
来源：
III-NITRIDE SEMICONDUCTOR OPTOELECTRONICS | 2017年 / 96卷
关键词：
MULTIQUANTUM BARRIER; NM EMISSION; INALGAN; ENHANCEMENT;
D O I：
10.1016/bs.semsem.2016.11.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：85 / 120
页数：36
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