Epitaxial growth and surface modeling of ZnO on c-plane Al2O3

被引：7
|
作者：
Murphy, TE [1 ]
Walavalkar, S [1 ]
Phillips, JD [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 26期
关键词：
D O I：
10.1063/1.1842357
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth of ZnO on c-plane sapphire by molecular beam epitaxy is presented for varying ratios of zinc and oxygen flux. Reflection high energy electron diffraction patterns during epitaxial growth suggest clear differences in the evolution of surface morphology for differing Zn flux. Atomic force microscope images indicate sizable hexagonal features in the surface morphology for Zn-rich material. A stochastic growth model is presented to represent the experimental ZnO surface, where differences in adatom lateral diffusion length are suspected to be the cause of the differing surface morphology. (C) 2004 American Institute of Physics.
引用
收藏
页码：6338 / 6340
页数：3
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