Alternating current electroluminescence from GaN-based nanorod light-emitting diodes

被引:28
|
作者
Wang, Kun [1 ]
Chen, Peiqi [1 ]
Chen, Jingjing [1 ]
Liu, Ye [1 ]
Wu, Chaoxing [1 ,2 ]
Sun, Jie [1 ,2 ]
Zhou, Xiongtu [1 ,2 ]
Zhang, Yongai [1 ,2 ]
Guo, Tailiang [1 ,2 ]
机构
[1] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
[2] Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
Alternating current electroluminescence; Nano-LED; GaN-LED; Frequency response; Working mechanisms; Non-carrier injection;
D O I
10.1016/j.optlastec.2021.107044
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Alternating current (AC)-driven electroluminescent (EL) devices have attracted widespread attention due to their special advantages. Under the trend of nanoscale miniaturization in optoelectronics, AC-driven EL devices with nanoscale are highly desirable to be applied to nano-optoelectronic integrated circuits. In this work, GaN-based nanorod LEDs (nLED) are used as nanoscale emitters to fabricate AC-driven nano-EL device, namely, AC-nLED. Two configurations including single-dielectric AC-nLED and double-dielectric AC-nLED without carrier injection are demonstrated. The electrical and optical characteristics of single-dielectric AC-nLED and double-dielectric AC-nLED are demonstrated, which have completely different frequency responses. The working mechanisms and origin of the difference in frequency response are discussed. Our work presents an alternative device configuration for obtaining AC-driven nano-EL devices, which are expected to be used in nano-photonic systems and nano-pixel light-emitting displays.
引用
收藏
页数:7
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