Design of High Efficiency X-Band Power Amplifier Based on GaN HEMT

被引：0
|
作者：
Tao, Di [1 ,2 ]
Lu, Yifeng [2 ]
Mo, Xiaohui [1 ,2 ]
Guo, Qingyu [1 ,2 ]
Zhu, Jinfeng [1 ]
机构：
[1] Xiamen Univ, Sch Elect Sci & Technol, Xiamen 3661102, Peoples R China
[2] Xiamen Sanan Integrated Circuit Co Ltd, Xiamen 361006, Peoples R China
来源：
2022 IEEE 10TH ASIA-PACIFIC CONFERENCE ON ANTENNAS AND PROPAGATION, APCAP | 2022年
关键词：
0.25um GaN HEMT; Power Amplifier (PA); Power added efficiency (PAE); X-band; MMIC;
D O I：
10.1109/APCAP56600.2022.10069359
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an X-band GaN power amplifier (PA) based on 0.25um GaN HEMT technology. In the chip area of 2.9*1.2mm2, the maximum output power is 8.5W, the power added efficiency (PAE) in the frequency band is 47%, and the gain is greater than 20dB. A high efficiency power amplifier with relative bandwidth of 21% is designed and implemented.
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页数：2
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