Synthesis and characterization of BNT thin films prepared by Sol-Gel method

被引：7
|
作者：
Abou Dargham, S. [1 ,2 ]
Ponchel, F. [2 ]
Zaatar, Y. [1 ]
Assaad, J. [2 ]
Remiens, D. [2 ]
Zaouk, D. [1 ]
机构：
[1] Lebanese Univ, Facul Sci 2, Appl Phys Laboratry, BP 90656, Fanar, Lebanon
[2] UVHC, MIMM Team, DOAE, IEMN, F-59313 Valenciennes, France
来源：
MATERIALS TODAY-PROCEEDINGS | 2016年 / 3卷 / 03期
关键词：
Lead-free; piezoelectric; Sol-Gel; BNT; thin films; FERROELECTRIC PROPERTIES; RAMAN-SPECTROSCOPY;
D O I：
10.1016/j.matpr.2016.02.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline piezoelectric lead-free Bi0.5Na0.5TiO3 (abbreviated as BNT) thin films were deposited on Pt/TiO2/SiO2/Si substrates by an optimized Sol-Gel process. The phase structure and morphology of the as-prepared product were examined by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). The film treated at 700 degrees C with the rapid thermal processor (RTP) for 30 sec is dense and well crystallized in the rhombohedral perovskite phase. The dielectric constant and loss tangent at 10 kHz are 420 and 0.07%, respectively, while the remnant polarization and coercive field are 12 mu C/cm(2) and 120 kV/cm, respectively, at 1000 Hz. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：810 / 815
页数：6
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