Luminescence from p-type GaAs crystals under intense mid-infrared irradiation

被引：1
|
作者：
Takahashi, T
Kambayashi, T
Mori, N
Kubo, H
Hamaguchi, C
Tsubouchi, N
机构：
[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan
[2] Osaka Univ, Inst Free Electron Laser, Osaka 5730128, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 01期
关键词：
free electron laser; compound semiconductors; Monte Carlo simulation;
D O I：
10.7567/JJAPS.41S1.88
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The band-gap luminescence from p-type GaAs crystals is observed with the intense mid-infrared (IR) radiation beam being directed to the samples. The FEL wavelength and power dependence of the luminescence intensity is found to be consistent with the results of a full band Monte Carlo simulation of the hole motion under the intense mid-IR FEL beam.
引用
收藏
页码：88 / 89
页数：2
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