InGaAs vertical-cavity surface-emitting lasers buried in an amorphous GaAs passivation layer

被引：0
|
作者：
Yoo, BS [1 ]
Chu, HY [1 ]
Park, MS [1 ]
Park, HH [1 ]
Lee, EH [1 ]
机构：
[1] KOREA ADV INST SCI & TECHNOL,DEPT MAT SCI & ENGN,TAEJON 305701,SOUTH KOREA
来源：
COMPOUND SEMICONDUCTORS 1995 | 1996年 / 145卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
InGaAs vertical-cavity surface-emitting lasers buried in an amorphous GaAs (a-GaAs) layer have been studied to reduce surface recombination and to improve device characteristics. Threshold current and transverse mode characteristics are improved compared to air-post type devices. In particular, smaller devices than 25 mu m diameter show more significant reduction of threshold currents. A stable single transverse mode emission for a 10 mu m device is also observed. The results suggest that a-GaAs-buried structure is useful for both reducing surface recombination current and obtaining a single transverse mode emission.
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收藏
页码：981 / 984
页数：4
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