Nanosurface Passivation with Indium Tin Oxide and Aluminum Oxide Double Layer on Nanotextured Silicon Solar Cells

被引：0
|
作者：
Ji, Hyung Yong [1 ,2 ,3 ]
Ryu, Sel Gi [1 ,2 ,3 ]
Byeon, Seong Kyun [3 ]
Kim, Myeong Jun [3 ]
Peck, Jong Hyeon [3 ]
Kim, Keunjoo [1 ,2 ]
机构：
[1] Chonbuk Natl Univ, Dept Mech Engn, Jeonju 54896, South Korea
[2] Chonbuk Natl Univ, Res Ctr Ind Technol, Jeonju 54896, South Korea
[3] Korea Inst Ind Technol, Solar & Energy Convers Technol Ctr, Cheonan 31056, South Korea
来源：
NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2018年 / 10卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
Nanosurface Passivation; Metal-Assisted Etching; Magnetron Sputtering; Si Solar Cell; SURFACES;
D O I：
10.1166/nnl.2018.2677
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigated the characteristics of the double thin film layers of indium tin oxide and Al2O3 as the anti-reflection coating layer on nanotextured Si solar cells in order to enhance the carrier collection by the indium tin oxide thin film as a transparent metamaterial. The nanotextured surface was formed on the microtextured surface by a metal-assisted chemical etching process. The double thin film layers with various thicknesses were deposited by a radio-frequency magnetron sputter, and the indium tin oxide thin films were annealed at 400 degrees C for 10 min by rapid thermal process. Regarding cell efficiency, the nanotextured solar cell with the double layer shows the efficiency of 14.94%, and the sample with Al2O3 single layer shows 12.1%. The indium tin oxide enhances the interfacial passivation effect on nanosurfaces, and the double layers also enhance light absorption with the increased quantum efficiency in the infrared spectral region.
引用
收藏
页码：497 / 502
页数：6
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