Molecular beam epitaxy growth of GaAs1-xBix

被引：400
|
作者：
Tixier, S [1 ]
Adamcyk, M
Tiedje, T
Francoeur, S
Mascarenhas, A
Wei, P
Schiettekatte, F
机构：
[1] Univ British Columbia, Dept Phys & Astron, AMPEL, Vancouver, BC V6T 1Z4, Canada
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
[3] Univ Montreal, Dept Phys, Montreal, PQ H3C 3J7, Canada
[4] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V5Z 1M9, Canada
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 14期
关键词：
D O I：
10.1063/1.1565499
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs1-xBix epilayers with bismuth concentrations up to x = 3.1% were grown on GaAs by molecular beam epitaxy. The Bi content in the films was measured by Rutherford backscattering spectroscopy. X-ray diffraction shows that GaAsBi is pseudomorphically strained to GaAs but that some structural disorder is present in the thick films. The extrapolation of the lattice constant of GaAsBi to the hypothetical zincblende GaBi alloy gives 6.33+/-0.06 Angstrom. Room-temperature photoluminescence of the GaAsBi epilayers is obtained and a significant redshift in the emission of GaAsBi of similar to84 meV per percent Bi is observed. (C) 2003 American Institute of Physics.
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页码：2245 / 2247
页数：3
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