Growth of high Bi concentration GaAs1-xBix by molecular beam epitaxy

被引：136
|
作者：
Lewis, R. B. [1 ,2 ]
Masnadi-Shirazi, M. [2 ,3 ]
Tiedje, T. [2 ]
机构：
[1] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada
[2] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8W 3P6, Canada
[3] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 08期
关键词：
GAAS;
D O I：
10.1063/1.4748172
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The incorporation of Bi is investigated in the molecular beam epitaxy growth of GaAs1-xBix. Bi content increases rapidly as the As-2:Ga flux ratio is lowered to 0.5 and then saturates for lower flux ratios. Growth under Ga and Bi rich conditions shows that Bi content increases strongly with decreasing temperature. A model is proposed where Bi from a wetting layer incorporates through attachment to Ga-terminated surface sites. The weak Ga-Bi bond can be broken thermally, ejecting Bi back into the wetting layer. Highly crystalline films with up to 22% Bi were grown at temperatures as low as 200 degrees C. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748172]
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页数：4
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