Catalystlike behavior of Si adatoms in the growth of monolayer Al film on Si(111)

被引：2

作者：

Teng, Jing ^{[1
]}

Zhang, Lixin ^{[2
]}

Jiang, Ying ^{[1
]}

Guo, Jiandong ^{[1
]}

Guo, Qinlin ^{[1
]}

Wang, Enge ^{[1
]}

Ebert, Philipp ^{[3
]}

Sakurai, T. ^{[4
]}

Wu, Kehui ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

[3] Forschungszentrum Julich GmbH, Inst Festkorperforsch, D-52425 Julich, Germany

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CHEMICAL PHYSICS | 2010年 / 133卷 / 01期

基金：

中国国家自然科学基金;

关键词：

QUANTUM-WELL STATES; NUCLEATION; ISLANDS; PB;

D O I：

10.1063/1.3455231

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The formation mechanism of monolayer Al(111)1 x 1 film on the Si(111) root 3 x root 3-Al substrate was studied by scanning tunneling microscopy and first-principles calculations. We found that the Si adatoms on the root 3 x root 3-Al substrate play important roles in the growth process. The growth of Al-1 x 1 islands is mediated by the formation and decomposition of SiAl2 clusters. Based on experiments and theoretical simulations we propose a model where free Si atoms exhibit a catalystlike behavior by capturing and releasing Al atoms during the Al film growth. (c) 2010 American Institute of Physics. [doi:10.1063/1.3455231]

引用

页数：5

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