Temporary Bonding and De-bonding Process for 2.5D/3D Applications

被引:7
|
作者
Ren, Qin [1 ]
Loh, Woon Leng [1 ]
Neo, Siang Kiat [1 ]
Chui, King-Dien [1 ]
机构
[1] ASTAR, Inst Microelect, 2 Fusionopolis Way,08-02 Innovis Tower, Singapore 138634, Singapore
关键词
TBDB; via-last; TSV;
D O I
10.1109/EPTC50525.2020.9315033
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Temporary bonding and de-bonding (TBDB) is one key technology in enabling the 2.5D/3D integration of semiconductor devices [1]. In this paper, we first evaluate two TBDB methods using different TBDB mechanism and corresponding adhesive materials, in particular for via-last Through Silicon Via (TSV) process. We compare a solvent-based TBDB method [2], [3] with another mechanical-based TBDB method. The second part of this paper analyze the process issues and root causes related to each TBDB methodology. Continuous improvement will need to rely on TBDB material and process development as well as integration optimization.
引用
收藏
页码:27 / 31
页数:5
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