Optical properties of manganese-doped ZnSe/ZnS quantum dots grown by molecular beam epitaxy

被引:10
|
作者
Wu, YH
Arai, K
Kuroda, N
Yao, T
Yamamoto, A
Shen, MY
Goto, T
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 980, Japan
[2] Natl Inst Interdisciplinary Adv Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 305, Japan
[3] Tohoku Univ, Fac Sci, Dept Phys, Sendai, Miyagi 98077, Japan
关键词
ZnSe/ZnS quantum dots; MBE; Mn-doping; FL; energy transfer;
D O I
10.1143/JJAP.36.L1648
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical properties of Mn-doped ZnSe/ZnS quantum dots (QD's) have been investigated by both steady-state and time-resolved photoluminescence (PL) measurements. Strong photoluminescence associated with Mn intra-d shell transitions has been observed for QD's with a longitudinal thickness of just few monolayers (ML's). The PL decay involves two processes with different lifetimes of which the faster one has a lifetime of about 5 mu s which is almost independent of the well thickness, while the other process has a Lifetime varying from 40 to 80 mu s when the well width decreases from 6 to 0.25 ML. The experimental results are interpreted by the use of rate equations which suggests that the enhanced Mn emission might be due to the relatively enhanced energy transfer from the QD's to the Mn atoms.
引用
收藏
页码:L1648 / L1650
页数:3
相关论文
共 50 条
  • [41] Photoluminescence of δ-doped ZnSe:(Te,N) grown by molecular beam epitaxy
    Kuskovsky, IL
    Tian, C
    Sudbrack, C
    Neumark, GF
    Lin, WC
    Guo, SP
    Tamargo, MC
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2269 - 2272
  • [42] Emission properties of manganese-doped ZnS nanocrystals
    Sapra, S
    Prakash, A
    Ghangrekar, A
    Periasamy, N
    Sarma, DD
    JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (05): : 1663 - 1668
  • [43] ANTIMONY-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    PARK, RM
    KLEIMAN, J
    MAR, HA
    SMITH, TL
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2851 - 2853
  • [45] Indium antimonide doped with manganese grown by molecular beam epitaxy
    Partin, DL
    Heremans, J
    Thrush, CM
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 860 - 867
  • [46] Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy
    I. P. Soshnikov
    N. V. Kryzhanovskaya
    N. N. Ledentsov
    A. Yu. Egorov
    V. V. Mamutin
    V. A. Odnoblyudov
    V. M. Ustinov
    O. M. Gorbenko
    H. Kirmse
    W. Neumann
    D. Bimberg
    Semiconductors, 2004, 38 : 340 - 343
  • [47] Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy
    Soshnikov, IP
    Kryzhanovskaya, NV
    Ledentsov, NN
    Egorov, AY
    Mamutin, VV
    Odnoblyudov, VA
    Ustinov, VM
    Gorbenko, OM
    Kirmse, H
    Neumann, W
    Bimberg, D
    SEMICONDUCTORS, 2004, 38 (03) : 340 - 343
  • [48] Optical properties of δ-doped ZnSe:Te grown by molecular beam epitaxy:: The role of tellurium -: art. no. 155205
    Kuskovsky, IL
    Tian, C
    Neumark, GF
    Spanier, JE
    Herman, IP
    Lin, WC
    Guo, SP
    Tamargo, MC
    PHYSICAL REVIEW B, 2001, 63 (15)
  • [49] OPTICAL-PROPERTIES OF ZNSE/ZNMGSSE SINGLE QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    SUDA, J
    KAWAKAMI, Y
    FUJITA, S
    FUJITA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (7B): : L986 - L989
  • [50] Fabrication and optical properties of ZnSe/ZnMgSSe multiple quantum wells grown by compound-source molecular beam epitaxy
    Hayashi, S
    Manabe, Y
    Tanahashi, I
    Tohda, T
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) : 456 - 460