Interlayer dependent polarity of magnetoresistance in graphene spin valves

被引:36
|
作者
Iqbal, M. Z. [1 ,2 ]
Iqbal, M. W. [1 ,2 ]
Jin, Xiaozhan [3 ]
Hwang, Changyong [3 ]
Eom, Jonghwa [1 ,2 ]
机构
[1] Sejong Univ, Dept Phys, Seoul 143747, South Korea
[2] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea
[3] Korea Res Inst Stand & Sci, Ctr Nanometrol, Taejon 305340, South Korea
基金
新加坡国家研究基金会;
关键词
MAGNETIC TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; TRANSPORT; BARRIER; FILMS;
D O I
10.1039/c4tc02389g
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We fabricated spin valves of NiFe/Al2O3/single layer graphene (SLG)/Co, NiFe/SLG/Co, and NiFe/Al2O3/Co. In the fabrication, lithography processes using e-beam resist or photoresist were avoided to obtain residue-free clean junctions in all devices. While all three types of magnetic junctions showed a distinctly clear spin valve effect from 10 to 300 K, the polarity of magnetoresistance (MR) revealed different signs. A negative MR value (-1.6% at 10 K) was observed in the spin valve effect for the junction with the Al2O3/SLG interlayer, however the other types of junctions showed conventional positive MR values. The positive or negative MR signs are explained by the Julliere model of spin-dependent tunneling.
引用
收藏
页码:298 / 302
页数:5
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