Interlayer dependent polarity of magnetoresistance in graphene spin valves

被引：36
|
作者：
Iqbal, M. Z. [1 ,2 ]
Iqbal, M. W. [1 ,2 ]
Jin, Xiaozhan [3 ]
Hwang, Changyong [3 ]
Eom, Jonghwa [1 ,2 ]
机构：
[1] Sejong Univ, Dept Phys, Seoul 143747, South Korea
[2] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea
[3] Korea Res Inst Stand & Sci, Ctr Nanometrol, Taejon 305340, South Korea
来源：
JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
MAGNETIC TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; TRANSPORT; BARRIER; FILMS;
D O I：
10.1039/c4tc02389g
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We fabricated spin valves of NiFe/Al2O3/single layer graphene (SLG)/Co, NiFe/SLG/Co, and NiFe/Al2O3/Co. In the fabrication, lithography processes using e-beam resist or photoresist were avoided to obtain residue-free clean junctions in all devices. While all three types of magnetic junctions showed a distinctly clear spin valve effect from 10 to 300 K, the polarity of magnetoresistance (MR) revealed different signs. A negative MR value (-1.6% at 10 K) was observed in the spin valve effect for the junction with the Al2O3/SLG interlayer, however the other types of junctions showed conventional positive MR values. The positive or negative MR signs are explained by the Julliere model of spin-dependent tunneling.
引用
收藏
页码：298 / 302
页数：5
相关论文
共 50 条
  • [1] Magnetoresistance of graphene-based spin valves
    Brey, L.
    Fertig, H. A.
    [J]. PHYSICAL REVIEW B, 2007, 76 (20)
  • [2] Spin independent magnetoresistance effects in vertical graphene spin valves
    Bodepudi, Srikrishna
    Singh, Abhay Pratap
    Pramanik, Sandipan
    [J]. NANOTECHNOLOGY, 2017, 28 (48)
  • [3] Angular dependent magnetoresistance in organic spin valves
    Xia, Huayan
    Zhang, Sangjian
    Li, Hao
    Li, Tianli
    Liu, Fang
    Zhang, Wenchao
    Guo, Wang
    Miao, Tian
    Hu, Wenjie
    Shen, Jian
    Gao, Yongli
    Yang, Junliang
    Fang, Mei
    [J]. RESULTS IN PHYSICS, 2021, 22
  • [4] Suppression of interlayer coupling and enhancement of magnetoresistance in spin valves with oxide layer
    Li, KB
    Wu, YH
    Qiu, JJ
    Han, GC
    Guo, ZB
    Xie, H
    Chong, TC
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (22) : 3663 - 3665
  • [5] Magnetoresistance and interlayer diffusion in PtMn spin valves upon postdeposition annealing
    Kim, YK
    Lee, SR
    Song, SA
    Park, GS
    Yang, HS
    Min, KI
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6907 - 6909
  • [6] Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks
    Bodepudi, S. C.
    Wang, X.
    Singh, A. P.
    Pramanik, S.
    [J]. JOURNAL OF NANOMATERIALS, 2016, 2016
  • [7] Angle dependent interlayer magnetoresistance in multilayer graphene stacks
    Bodepudi, S. C.
    Wang, Xiao
    Pramanik, S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2015, 118 (16)
  • [8] Magnetoresistance and interlayer coupling in spin valves employing very thin Cu spacer
    Jo, S
    Seigler, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) : 7110 - 7112
  • [9] Interlayer quality dependent graphene spin valve
    Iqbal, Muhammad Zahir
    Hussain, Ghulam
    Siddique, Salma
    Iqbal, Muhammad Waqas
    Murtaza, Ghulam
    Ramay, Shahid Mahmood
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2017, 422 : 322 - 327
  • [10] Influence of Spin Polarizer on the Magnetoresistance, Switching Property, and Interlayer Interactions in Co/Pd Single Spin Valves
    Tahmasebi, T.
    Piramanayagam, S. N.
    Sbiaa, R.
    Chong, T. C.
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 2012, 48 (11) : 3434 - 3437
12345