Sub-millimeter size high mobility single crystal MoSe2 monolayers synthesized by NaCl-assisted chemical vapor deposition

被引:25
|
作者
Li, Juncheng [1 ]
Yan, Wenjie [1 ]
Lv, Yanhui [1 ]
Leng, Jian [1 ]
Zhang, Duan [2 ]
Coileain, Cormac O. [3 ]
Cullen, Conor P. [3 ]
Stimpel-Lindner, Tanja [4 ]
Duesberg, Georg S. [3 ,4 ]
Cho, Jiung [5 ]
Choi, Miri [6 ]
Chun, Byong Sun [7 ]
Zhao, Yanfeng [1 ]
Lv, Chengzhai [1 ]
Arora, Sunil K. [8 ]
Wu, Han-Chun [1 ]
机构
[1] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
[2] Capital Normal Univ, Elementary Educ Coll, Beijing Key Lab Nanophoton & Nanostruct, Beijing 100048, Peoples R China
[3] Trinity Coll Dublin, CRANN, Adv Mat & Bioengn Res AMBER, Sch Chem, Dublin, Ireland
[4] Univ Bundeswehr Munchen, Fac Elect Engn & Informat Technol, EIT 2, Inst Phys, Munich, Germany
[5] Korea Basic Sci Inst, Western Seoul Ctr, Seoul 03579, South Korea
[6] Korea Basic Sci Inst, Chuncheon Ctr, Chunchon 24341, South Korea
[7] Korea Res Inst Stand & Sci, Div Ind Metrol, Daejeon 305340, South Korea
[8] Panjab Univ, Ctr Nanosci & Nanotechnol, Chandigarh 160014, India
基金
中国国家自然科学基金;
关键词
TRANSITION-METAL DICHALCOGENIDES; LARGE-AREA; LAYER MOSE2; GROWTH; OPTOELECTRONICS; EXFOLIATION; NANOSHEETS; FILMS;
D O I
10.1039/c9ra09103c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Monolayer MoSe2 is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe2 films in a reliable and scalable manner is still a challenging task as conventional chemical vapor deposition (CVD) or exfoliation based techniques are limited due to the small domains/nanosheet sizes obtained. Here, based on NaCl assisted CVD, we demonstrate the simple and stable synthesis of sub-millimeter size single-crystal MoSe2 monolayers with mobilities ranging from 38 to 8 cm(2) V-1 s(-1). The average mobility is 12 cm(2) V-1 s(-1). We further determine that the optical responsivity of monolayer MoSe2 is 42 mA W-1, with an external quantum efficiency of 8.22%.
引用
收藏
页码:1580 / 1587
页数:8
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