Interface formation between ultrathin films of titanium and (0001) sapphire substrates

被引：14
|
作者：
Bernath, S
Wagner, T
Hofmann, S
Ruhle, M
机构：
[1] Max Planck Inst Met Forsch, D-70174 Stuttgart, Germany
[2] Natl Res Inst Met, Tsukuba Labs, Tsukuba, Ibaraki 305, Japan
来源：
SURFACE SCIENCE | 1998年 / 400卷 / 1-3期
关键词：
in-situ Auger electron spectroscopy; interface reaction; molecular beam epitaxy; sapphire (0001); surface reduction; thin film; titanium; titanium oxide;
D O I：
10.1016/S0039-6028(97)00890-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The growth of ultrathin films of titanium (less than or equal to 2 monolayers) on the (0001) plane of sapphire at room temperature was investigated by in-situ Auger electron spectroscopy. Quantification of experimental measurements showed that the interface between titanium and sapphire was composed of a suboxide of titanium and partially reduced aluminium oxide. interface formation starred with the appearance of a Ti2O3-type phase, which led to pure titanium with increasing film thickness. (C) 1998 Elsevier Science B.V.
引用
收藏
页码：335 / 344
页数：10
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