MODELLING OF THE INFLUENCE OF INTERELECTRONIC INTERACTION ON THE STATIONARY CHARACTERISTICS OF A RESONANT TUNNEL DIODE WITH SPACER LAYERS

被引：0
|
作者：
Elesin, V. F. [1 ]
Remnev, M. A. [1 ]
Kateev, I. Yu. [1 ]
机构：
[1] Natl Res Nucl Univ MEPhI, Moscow, Russia
来源：
RUSSIAN PHYSICS JOURNAL | 2009年 / 52卷 / 11期
关键词：
resonant tunneling; resonant tunnel diode; spacers; THICKNESS; TERAHERTZ;
D O I：
10.1007/s11182-010-9357-6
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The influence of the interelectronic interaction on the stationary characteristics of a resonant tunnel diode (RTD) with spacer layers (spacers) is investigated by means of a self-consistent solution to Schrodinger and Poisson equations. It is demonstrated that the interelectronic interaction influences significantly the RTD voltampere characteristics, in particular, it decreases the peak current density and displaces the position of maxima of the peak current dependence on the emitter spacer size. It is also demonstrated that the hysteresis of the RTD volt-ampere characteristics vanishes for definite spacer sizes.
引用
收藏
页码：1186 / 1192
页数：7
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