MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precursor

被引：0
|
作者：
Jones, AC
Leedham, TJ
Wright, PJ
Crosbie, MJ
Lane, PA
Williams, DJ
Fleeting, KA
Otway, DJ
O'Brien, P
机构：
[1] Inorgtech Ltd, Mildenhall IP28 7DE, Suffolk, England
[2] Def Res Agcy, Great Malvern WR14 3PS, Worcs, England
[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England
来源：
CHEMICAL VAPOR DEPOSITION | 1998年 / 4卷 / 02期
关键词：
D O I：
10.1002/(SICI)1521-3862(199803)04:02<46::AID-CVDE46>3.0.CO;2-1
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Communication: Thin films of zirconia and zirconates have a variety of important applications. MOCVD is an attractive technique for the preparation of these films, but there are a number of drawbacks associated with the currently used Zr precursors. This paper reports on a new class of precursor of the form [Zr(OR)(2)(thd)(2)], where R = Pr-i or Bu-t, which allows growth by liquid injection of ZrO2 under transport-controlled conditions at significantly lower temperatures than can be achieved with conventional sources.
引用
收藏
页码：46 / +
页数：5
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