DC and RF Characteristics of Type II Lineup InAs/AlSb HFETs

被引：0

作者：

Lin, Heng-Kuang ^{[1
]}

Lin, Yu-Chao ^{[1
]}

Fan, Ta-Wei ^{[1
]}

Chiu, Pei-Chin ^{[1
]}

Chen, Shu-Han ^{[1
]}

Chyi, Jen-Inn ^{[1
]}

Ko, Chih-Hsin ^{[2
]}

Kuan, Ta-Ming ^{[2
]}

Hsieh, Meng-Kuei ^{[2
]}

Lee, Wen-Chin ^{[2
]}

Mann, Clement H. ^{[2
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli, Taiwan

[2] Taiwan Semicond Mfg Co, Exploratory Res Div, Chungli, Taiwan

来源：

APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Growth, fabrication, and characterization for a type II lineup InAs/AlSb HFET are presented. An as-grown epitaxy wafer with a 300K mobility of 21,300 cm(2)/V-s and an electron sheet concentration of 1.4x10(12) cm(-2) was processed into devices. Peak transconductance of 720 mS/mtn and drain current of 650mA/mm at drain voltage of 1.0V are achieved in a 1-mu m gate length device. It is observed strong drain bias dependence of both DC drain currents and transconductances, on-state bell-shaped peaks in the gate. leakage, and a large dispersion between DC and RF transconductances. Strong impact ionization along with no hole confinement in the InAS channel are suggested attributions for these phenomena.

引用

页码：3127 / +

页数：3

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