Synthesis and superconductivity of In-doped SnTe nanostructures

被引:11
|
作者
Kumaravadivel, Piranavan [1 ,2 ]
Pan, Grace A. [2 ,3 ]
Zhou, Yu [1 ,2 ]
Xie, Yujun [1 ,2 ]
Liu, Pengzi [1 ,2 ]
Cha, Judy J. [1 ,2 ]
机构
[1] Yale Univ, Dept Mech Engn & Mat Sci, New Haven, CT 06511 USA
[2] Energy Sci Inst, Yale West Campus, West Haven, CT 06516 USA
[3] Yale Univ, Dept Phys, New Haven, CT 06511 USA
来源
APL MATERIALS | 2017年 / 5卷 / 07期
关键词
MAJORANA FERMIONS; SURFACE; STATE;
D O I
10.1063/1.4994293
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
InxSn(1-x)Te is a time-reversal invariant candidate 3D topological superconductor derived from doping the topological crystalline insulator SnTe with indium. The ability to synthesize low-dimensional nanostructures of indium-doped SnTe is key for realizing the promise they hold in future spintronic and quantum information processing applications. But hitherto only bulk synthesized crystals and nanoplates have been used to study the superconducting properties. Here for the first time we synthesize InxSn(1-x)Te nanostructures including nanowires and nanoribbons, which show superconducting transitions. In some of the lower dimensional morphologies, we observe signs of more than one superconducting transition and the absence of complete superconductivity. We propose that material inhomogeneity, such as indium inhomogeneity and possible impurities from the metal catalyst, is amplified in the transport characteristics of the smaller nanostructures and is responsible for this mixed behavior. Our work represents the first demonstration of InxSn(1-x)Te nanowires with the onset of superconductivity, and points to the need for improving the material quality for future applications. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
引用
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页数:9
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