Water based I-line projection lithography of PEDOT

被引:8
|
作者
Touwslager, FJ [1 ]
Willard, NP [1 ]
de Leeuw, DM [1 ]
机构
[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
关键词
solution processing; scanning tunneling microscopy; polythiophene and derivatives; conductivity;
D O I
10.1016/S0379-6779(02)00656-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Structured conducting thin layers of poly(3,4-ethylenedioxythiophene) (PEDOT) have been made by photosensitizing a PEDOT latex which is stabilized with polystyrene sulphonic acid (PSS). The process is based on waterborne solutions only and makes use of negatively acting, highly sensitive, lithography with UV light of 365 nm (1-line). The minimum feature size obtained is 1 mum spacings and 2.5 mum lines with a sheet resistance of about 1 kOhm/square. The environmentally acceptable technology has been demonstrated with functional all-polymer integrated circuits prepared on 150-mm wafers.
引用
收藏
页码:53 / 54
页数:2
相关论文
共 50 条
  • [21] PROCESS LATITUDE MODELING FOR SUB-MICRON G-LINE AND I-LINE LITHOGRAPHY
    MONAHAN, KM
    BERNARD, DA
    BLANCO, M
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 538 : 221 - 232
  • [22] Enhanced i-line lithography using AZ(R)BARLi(TM) coating
    Yang, TS
    Kook, T
    Taylor, JA
    Josephson, W
    Spak, M
    Dammel, RR
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII, 1996, 2724 : 724 - 737
  • [23] Narrow linewidth DBR laser based on high order Bragg grating defined by i-line lithography
    Chen, Hong
    Jia, Peng
    Chen, Chao
    Qin, Li
    Chen, Yongyi
    Huang, Youwen
    Ning, Yongqiang
    Wang, Lijun
    OPTICS COMMUNICATIONS, 2019, 445 : 296 - 300
  • [24] Fabrication of tri-gated junctionless poly-Si transistors with I-line based lithography
    Department of Electrical Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan
    不详
    Jpn. J. Appl. Phys., 4 SPEC. ISSUE
  • [25] SUB-MICRON OPTICAL LITHOGRAPHY USING AN I-LINE WAFER STEPPER
    LEE, S
    GRILLO, S
    MILLER, V
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 538 : 17 - 22
  • [26] Fabrication of tri-gated junctionless poly-Si transistors with I-line based lithography
    Lin, Cheng-I
    Lee, Ko-Hui
    Lin, Horng-Chih
    Huang, Tiao-Yuan
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
  • [27] Fabrication of tapered waveguides by i-line UV lithography for flexible coupling control
    Wang, Pei-Hsun
    Lee, Tien-Hsiang
    Huang, Wei-Hao
    OPTICS EXPRESS, 2023, 31 (03) : 4281 - 4290
  • [28] Substrate effects of silicon nitride on i-line and deep-UV lithography
    Kim, BC
    Huh, H
    Kim, JJ
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII, 1996, 2724 : 119 - 130
  • [29] Patterning sub-30-nm MOSFET gate with i-line lithography
    Asano, K
    Choi, YK
    King, TJ
    Hu, CM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (05) : 1004 - 1006
  • [30] Optimizing image transfer into AZ®BARLi® bottom coat for submicron I-Line lithography
    Caligiore, A
    Valtolina, M
    Cipolli, A
    Monguzzi, A
    Mohr, F
    Spak, MA
    Dammel, RR
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 1360 - 1364