Simulation of the nanoelectronic single-electron transistor and the nanoelectronic C-NOT single-electron gate

被引：0
|
作者：
Zardalidis, George T. [1 ]
机构：
[1] Democritus Univ Thrace, Dept Elect & Comp Engn, GR-67100 Xanthi, Greece
来源：
2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, PROCEEDINGS | 2006年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A real time simulation of a single electron transistor and a single-electron control - not gate are presented. The logic operation of the control - not gate is verified using SIMON simulator. Bits of information are represented by the presence or absence of single electrons at conducting islands. The real time simulation of a single electron transistor is made with a MATLAB algorithm and it is based on the changes of the circuit's free energy. The operation of the circuits is analysed using the Monte Carlo method.
引用
收藏
页码：1303 / 1306
页数：4
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